IDB10S60C 2 nd generation thinq! tm sic schottky diode features ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery/ no forward recovery ? no temperature influence on the switching behavior ? high surge current capability ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? breakdown voltage tested at 5ma 2) thinq! 2g diode designed for fast switching applications like: ? ccm pfc ? motor drives maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous forward current i f t c <135 c 10 a rms forward current i f,rms f =50 hz 15 surge non-repetitive forward current, sine halfwave i f,sm t c =25 c, t p =10 ms 76 repetitive peak forward current i f,rm t j =150 c, t c =100 c, d =0.1 32 non-repetitive peak forward current i f,max t c =25 c, t p =10 s 350 i2t value i 2 d t t c =25 c, t p =10 ms 29 a 2 s repetitive peak reverse voltage v rrm 600 v diode ruggedness dv/dt d v/ d t v r =0?480v 50 v/ns power dissipation p tot t c =25 c 83 w operating and storage temperature t j , t stg -55 ... 175 c value v dc 600 v q c 24 nc i f 10 a product summary d 2 pak type package marking pin 2 pin 3 IDB10S60C d 2 pak d10s60c c a rev. 2.1 page 1 2009-01-07
IDB10S60C parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.8 k/w r thja smd version, device on pcb, minimal footprint --62 smd version, device on pcb, 6 cm 2 cooling area 3) -35- soldering temperature, reflowsoldering @ 10sec. t sold reflow msl1 - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics dc blocking voltage v dc i r =0.14 ma 600 - - v diode forward voltage v f i f =10 a, t j =25 c - 1.5 1.7 i f =10 a, t j =150 c - 1.7 2.1 reverse current i r v r =600 v, t j =25 c - 1.4 140 a v r =600 v, t j =150 c - 5 1400 ac characteristics total capacitive charge q c -24-nc switching time 4) t c - - <10 ns total capacitance c v r =1 v, f =1 mhz - 480 - pf v r =300 v, f =1 mhz -60- v r =600 v, f =1 mhz -60- 1) j-std20 and jesd22 5) only capacative charge occuring, guaranteed by design. values v r =400 v, i f i f,max , d i f /d t =200 a/s, t j =150 c 4) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr , which is dependent on t j , i load , di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection. 2) all devices tested under avalanche conditions, for a time periode of 5ms, at 5ma. 3) device on 40mm*40mm*1.5mm epox pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertikal with out blown air. thermal resistance, junction - ambient rev. 2.1 page 2 2009-01-07
IDB10S60C 1 power dissipation 2 diode forward current p tot =f( t c ) i f =f( t c ); t j 175 c 3 typ. forward characteristic 4 typ. forward characteristic in surge current i f =f( v f ); t p =400 s mode parameter: t j i f =f( v f ); t p =400 s; parameter: t j 0 20 40 60 80 100 25 50 75 100 125 150 175 200 t c [c] p tot [w] -55 c 25 c 100 c 150 c 175c 0 10 20 30 01234 v f [v] i f [a] 0 5 10 15 20 25 25 50 75 100 125 150 175 t c [c] i f [a] -55 c 25 c 100 c 150 c 175c 0 20 40 60 80 100 120 02468 v f [v] i f [a] rev. 2.1 page 3 2009-01-07
IDB10S60C 5 typ. forward power dissipation vs. 6 typ. reverse current vs. reverse voltage average forward current i r =f( v r ) p f,av =f( i f ), t c =100 c, parameter: d = t p / t parameter: t j 7 transient thermal impedance 8 typ. capacitance vs. reverse voltage z thjc =f( t p ) c =f( v r ); t c =25 c, f =1 mhz parameter: d = t p / t 10 3 10 2 10 1 10 0 10 -1 0 100 200 300 400 500 600 v r [v] c [pf] 0.01 0.02 0.1 0.2 0.5 single pulse 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] -55 c 25 c 100 c 150 c 175 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 100 200 300 400 500 600 v r [v] i r [a] 0.1 0.2 0.5 1 0 10 20 30 40 50 0 5 10 15 20 25 i f(av) [a] p f(av) [w] rev. 2.1 page 4 2009-01-07
IDB10S60C 9 typ. c stored energy 10 typ. capacitive charge vs. current slope e c =f( v r ) q c =f(d i f /d t ) 5) ; t j =150 c; i f i f,max 0 5 10 15 20 25 100 400 700 1000 di f /d t [a/s] q c [nc] 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 v r [v] e c [c] rev. 2.1 page 5 2009-01-07
IDB10S60C pg-to220-3-45 (d 2 pak): outline rev. 2.1 page 6 2009-01-07 dimensions in mm/inches rev. 2.1 page 6 2009-01-07
IDB10S60C published by infineon technologies ag 81726 munich, germany all rights reserved. legal disclaimer of any third party. information (www.infineon.com). warnings ? 2007 infineon technologies ag the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can or other persons may be endangered. reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user rev. 2.1 page 7 2009-01-07
|
